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Covering silicon wafers, cells, and modules—every step is engineered for efficiency.
Covering silicon wafers, cells, and modules—every step is engineered for efficiency.
| Dimensions | 182.2mm*183.75mm±0.5mm, Φ256mm±0.5mm | TkVoltage: -0.26%/K |
| Thickness | 130±20μm | TkCurrent: +0.046%/K |
| Front (-) | 16*0.03±0.02mm main busbars (silver), 172 finger lines, blue (dark blue) anti-reflective coating (SiNx) | TkPower: -0.32%/K |
| Back (+) | 16*0.03±0.02mm main busbars (silver), 190 finger lines, blue (dark blue) anti-reflective coating (SiNx) | Rsh≥35Ω, Irev2≤1A |
| Intensity (W/m²) | 1000 | 900 | 800 | 600 | 400 |
| Uoc | 1.000 | 0.996 | 0.991 | 0.988 | 0.962 |
| Isc | 1.000 | 0.903 | 0.803 | 0.602 | 0.403 |
| * Uoc (Isc) at 1000 W/m² is taken as standard; shows how Uoc (Isc) decreases with light intensity. | |||||
| Minimum Peel Strength | ≥0.5 N/mm | ||||
| Results may vary depending on solder type, soldering method, and conditions | |||||

| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Power Point Voltage Vmpp(V) |
Maximum Power Point Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-183M-256 | 25.6 | 8.569 | 0.633 | 13.536 | 0.732 | 13.924 | 84.07 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Output Voltage Umpp(V) |
Maximum Output Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-183M-20.3 | >20.5% | 6.795 | 0.588 | 11.555 | 0.700 | 13.036 | 74.45 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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