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Covering silicon wafers, cells, and modules—every step is engineered for efficiency.
Covering silicon wafers, cells, and modules—every step is engineered for efficiency.
| Dimensions | 210mm * 182.3mm ±0.5mm | TkVoltage: -0.255 ±0.010%/K |
| Thickness | 130 ±20μm | TkCurrent: +0.041 ±0.004%/K |
| Front (-) | 16*0.03 ±0.02mm main busbars (silver), 210 finger lines (silver), blue anti-reflective coating | TkPower: -0.305 ±0.025%/K |
| Back (+) | 16*0.03 ±0.02mm main busbars (silver), 228 finger lines (silver), blue anti-reflective coating | Rsh ≥ 35Ω, Irev2 ≤ 1A |
| Intensity (W/m²) | 1000 | 900 | 800 | 600 | 400 |
| Voc | 1.000 | 0.996 | 0.991 | 0.988 | 0.962 |
| Isc | 1.000 | 0.903 | 0.803 | 0.602 | 0.403 |
| * Voc (Isc) at 1000 W/m² is taken as standard; shows how Voc (Isc) decreases with light intensity. | |||||
| Minimum Peel Strength | ≥0.5 N/mm | ||||
| Results may vary depending on solder type, soldering method, and conditions | |||||

| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Power Point Voltage Vmpp(V) |
Maximum Power Point Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-210R-257 | 25.7 | 9.81 | 0.625 | 15.695 | 0.742 | 15.897 | 83.17 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Output Voltage Umpp(V) |
Maximum Output Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-210R-21.5 | >21.5% | 8.21 | 0.620 | 13.242 | 0.7356 | 13.408 | 83.31 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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