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Covering silicon wafers, cells, and modules—every step is engineered for efficiency.
| Dimensions | 210mm * 210mm ±0.5mm, Φ295mm ±0.5mm | TkVoltage: -0.25%/K |
| Thickness | 130 ±20μm | TkCurrent: +0.045%/K |
| Front (-) | 18*0.03 ±0.02mm main busbars (silver), 188 finger lines, blue (dark blue) anti-reflective coating (SiN) | TkPower: -0.29%/K |
| Back (+) | 18*0.03 ±0.02mm main busbars (silver), 202 finger lines, blue (dark blue) anti-reflective coating (SiN) | Rsh ≥ 35Ω, Irev2 ≤ 1A |
| Intensity (W/m²) | 1000 | 900 | 800 | 600 | 400 |
| Uoc | 1.000 | 0.996 | 0.991 | 0.988 | 0.962 |
| Isc | 1.000 | 0.903 | 0.803 | 0.602 | 0.403 |
| * Uoc (Isc) at 1000 W/m² is taken as standard; shows how Uoc (Isc) decreases with light intensity. | |||||
| Minimum Peel Strength | ≥0.5 N/mm | ||||
| Results may vary depending on solder type, soldering method, and conditions | |||||
| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Power Point Voltage Vmpp(V) |
Maximum Power Point Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-210M-256 | 25.6 | 11.289 | 0.633 | 17.833 | 0.732 | 18.524 | 83.25 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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| Efficiency Code | Efficiency Eff(%) |
Maximum Output Power Pmpp(W) |
Maximum Output Voltage Umpp(V) |
Maximum Output Current Impp(A) |
Open-Circuit Voltage Uoc(V) |
Short-Circuit Current Isc(A) |
Fill Factor FF(%) |
|---|---|---|---|---|---|---|---|
| FJ-210M-20.3 | >20.5% | 8.951 | 0.588 | 15.224 | 0.700 | 17.036 | 75.06 |
| Standard Test Conditions: 1000W/m², AM1.5, 25℃ The above technical specifications are subject to change; FUJIHALO reserves the final interpretation. |
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